GaN-Based Schottky Diode | IntechOpen
Study of a GaN Schottky diode based hydrogen sensor with a hydrogen peroxide oxidation approach and platinum catalytic metal - ScienceDirect
High-performance quasi-vertical GaN Schottky diode with low turn-on voltage - ScienceDirect
Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances (RSC Publishing)
Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect
Chinese team develops Kilovolt GaN diode - News
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
I-V characteristics of n-type GaN-based Schottky diodes fabricated... | Download Scientific Diagram
Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction | Discover Nano
Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel | Journal of Electronic Materials
Figure 2 from On the ESD behavior of AlGaN/GaN schottky diodes and trap assisted failure mechanism | Semantic Scholar
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes
Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface | ACS Applied Materials & Interfaces
Vertical gallium nitride Schottky diode combining high current/breakdown
Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces | ACS Applied Materials & Interfaces
GaN planar Schottky barrier diode with cut‐off frequency of 902 GHz - Liang - 2016 - Electronics Letters - Wiley Online Library
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
